THE DIFFERENCE BETWEEN THE CONTACT STRUCTURE WITH NANOSIZE INCLUSIONS FROM THE SEMICONDUCTOR PHOTODIODES
( Pp. 196-202)

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Imamov Erkin Zunnunovich doktor fiz.-mat. nauk, professor
Tashkent University of Information Technologies Jalalov Temur Asfandiyarovich d-r fiz.-mat. nauk, starshiy prepodavatel
Tashkent Institute of Information Technologies. Tashkent, Uzbekistan Muminov Ramizulla Abdullaevich akademik Akademii nauk respubliki Uzbekistan, glavnyy nauchnyy sotrudnik
Physical-Technical Institute, «Physics-Sun» Uzbekistan Academy of sciences Rakhimov Rustam Kh. Dr. Sci. (Eng.); Head at the Laboratory No. 1
Institute of Materials Science of the SPA “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan
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Abstract:
In the complex of works [1] has developed a fundamentally new model of the contact structure, which is formed on the illuminated surface of silicon by spraying nanoinclusions with great electrical capacitance from another semiconductor. Photovoltaic converters based on the new contact structure exhibit unique electrical properties.
How to Cite:
Imamov E.Z., Jalalov T.A., Muminov R.A., Rakhimov R.K., (2016), THE DIFFERENCE BETWEEN THE CONTACT STRUCTURE WITH NANOSIZE INCLUSIONS FROM THE SEMICONDUCTOR PHOTODIODES. Computational Nanotechnology, 3: 196-202.
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Keywords:
solar energy, solar cell, nanocluster, quantum dots, nanoscale contact structure, nanoscale p-n junction".