( Pp. 203-207)

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Djalalov Temur Asfandiyarovich a senior lecturer
Tashkent University of Information Technologies Muminov Ramizulla Abdullaevich Academician Uzbekistan Academy of sciences.
Institute of Physics and Technology, Scientific and Production Association «Physics-Sun» of the Academy of Sciences of the Republic of Uzbekistan Rakhimov Rustam Khakimovich PhD, head of laboratory №1.
Institute of materials science «Physics-sun». Uzbekistan Academy of sciences Imamov Erkin Zunnunovich Dr., Professor of physics deportment TUIT, Professor.
Tashkent University of Information Technologies
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In the complex of works [1] has developed a fundamentally new model of the contact structure, which is formed on the illuminated surface of silicon by spraying nanoinclusions with great electrical capacitance from another semiconductor. Photovoltaic converters based on the new contact structure exhibit unique electrical properties. In this paper we show the important structural differences between the new contact and the traditional semiconductor photodiodes.
How to Cite:
Djalalov T.A., Muminov R.A., Rakhimov R.K., Imamov E.Z., (2016), THE DIFFERENCE BETWEEN THE CONTACT STRUCTURE WITH NANOSIZE INCLUSIONS FROM THE SEMICONDUCTOR PHOTODIODES. Computational Nanotechnology, 3: 203-207.
Reference list:
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solar energy, solar cell, nanoinclusions, quantum dots, nanoscale contact structure, nanoscale p-n junction".