THE DIFFERENCE BETWEEN THE CONTACT STRUCTURE WITH NANOSIZE INCLUSIONS FROM THE SEMICONDUCTOR PHOTODIODES
( Pp. 203-207)
Djalalov Temur Asfandiyarovich
Muminov Ramizulla Abdullaevich
Rakhimov Rustam Khakimovich
Imamov Erkin Zunnunovich
More about authors
Djalalov Temur Asfandiyarovich
a senior lecturer
Tashkent University of Information Technologies Muminov Ramizulla Abdullaevich Academician Uzbekistan Academy of sciences.
Institute of Physics and Technology, Scientific and Production Association «Physics-Sun» of the Academy of Sciences of the Republic of Uzbekistan Rakhimov Rustam Khakimovich PhD, head of laboratory №1.
Institute of materials science «Physics-sun». Uzbekistan Academy of sciences Imamov Erkin Zunnunovich Dr., Professor of physics deportment TUIT, Professor.
Tashkent University of Information Technologies
Tashkent University of Information Technologies Muminov Ramizulla Abdullaevich Academician Uzbekistan Academy of sciences.
Institute of Physics and Technology, Scientific and Production Association «Physics-Sun» of the Academy of Sciences of the Republic of Uzbekistan Rakhimov Rustam Khakimovich PhD, head of laboratory №1.
Institute of materials science «Physics-sun». Uzbekistan Academy of sciences Imamov Erkin Zunnunovich Dr., Professor of physics deportment TUIT, Professor.
Tashkent University of Information Technologies
Abstract:
In the complex of works [1] has developed a fundamentally new model of the contact structure, which is formed on the illuminated surface of silicon by spraying nanoinclusions with great electrical capacitance from another semiconductor. Photovoltaic converters based on the new contact structure exhibit unique electrical properties. In this paper we show the important structural differences between the new contact and the traditional semiconductor photodiodes.
How to Cite:
Djalalov T.A., Muminov R.A., Rakhimov R.K., Imamov E.Z., (2016), THE DIFFERENCE BETWEEN THE CONTACT STRUCTURE WITH NANOSIZE INCLUSIONS FROM THE SEMICONDUCTOR PHOTODIODES. Computational Nanotechnology, 3: 203-207.
Reference list:
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Rakhimov R.KH., Saidov M.S., Ermakov V.P. // Osobennosti sinteza funktsional noy keramiki s kompleksom zadannykh svoystv radiatsionnym metodom. CHast 5. Mekhanizm generatsii impul sov funktsional noy keramikoy // Jorn. Computational nanotechnology , №2, 2016, C. 81-94.
T.A. Dzhalalov, E.Z. Imamov, R.A. Muminov/ The Electrical Properties of a SS with Multiple Nano scale p-n Transitions //ISSN 0003701X, Applied Solar Energy, 2014, Vol. 50, No. 4, p.p. 228-232. Allerton Press, Inc., 2014
R.A. Muminov, E.Z. Imamov, T.A. Jalalov / Condition and prospects of the problem of the direct transformation of the solar radiation in electric energy on base silicon photo transformation/ //Jorn. Problems of energy and sources saving (special issue) № 3-4. Tashkent, 2013, P.50-55.
E.Z. Imamov, T.A. Dzhalalov, R.A. Muminov, R.KH. Rakhimov // Teoreticheskaya model novoy kontaktnoy struktury nanoob ekt-poluprovodnik // Jorn. Computational nanotechnology , №4, 2015, C. 51-57.
E.Z. Imamov, T.A. Jalalov, R.A. Muminov, H.Kh. Rakhimov // The theoretical model of new contact structure nanoobject-semicondactor // Jorn. Computational nanotechnology , №4, 2015, p.58-63.
V.I. Vissarionov i dr. //Solnechnaya energetika: uchebnoe posobie dlya vuzov //M. Izd. dom MEI. 2008 s. 324.
Ledentsov N.N., Ustinov V.M., SHCHukin V.A., i dr. Geterostruktury s kvantovymi tochkami: poluchenie, svoystva, lazery //FTP.1998.T.32.№4. S. 385-410.
Ledentsov N.N., Ustinov V.M., Ivanov S.V. i dr. //Uporyadochennye massivy kvantovykh tochek v poluprovodnikovykh matritsakh //UFN.1996. T.166. №4. S. 423-428.
Shchukin V.A., Ledentsov N.N., Kop ev P.S., BimbergD. /Spontaneous ordering of arrays of coherent strained islands / Phys.Rev.Lett.1995.V.75. №16. P. 2968-2971.
Rakhimov R.KH., Saidov M.S., Ermakov V.P. // Osobennosti sinteza funktsional noy keramiki s kompleksom zadannykh svoystv radiatsionnym metodom. CHast 5. Mekhanizm generatsii impul sov funktsional noy keramikoy // Jorn. Computational nanotechnology , №2, 2016, C. 81-94.
Keywords:
solar energy, solar cell, nanoinclusions, quantum dots, nanoscale contact structure, nanoscale p-n junction".
