PROPERTIES OF GaAs/AlGaAs HETEROPHOTOTRANSFORMATORS WITH HOLOGRAPHIC CONCENTRATORS
( Pp. 50-51)

More about authors
Abdukadirov Muhitdin Abdurashitovich d-r tehn. nauk, professor
Tashkent University of information Technologies Azamatov Zakir Tahirovich d-r fiz.-mat. nauk, professor
Tashkent State Technical University Ganiyev Abror Sattarovich kand. fiz.-mat. nauk, docent
Tashkent University of information Technologies Muminov Ramizulla Abdullaevich akademik Akademii nauk respubliki Uzbekistan, glavnyy nauchnyy sotrudnik
Physical-Technical Institute, «Physics-Sun» Uzbekistan Academy of sciences Axmedova Nodira Amindjanovna kand. fiz.-mat. nauk, docent
Tashkent University of information Technologies
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Abstract:
Studied photovoltaic processes in GaAs /AlGaAs heterostructure solar cell with a spectral sensitivity in the range of 450 ≤ λ≤ 850 nm under holographic concentrator illumination. It is shown that with increasing of concentration of the solar flux to 10krat with a linear increase in short-circuit current and open circuit voltage efficiency reaches its maximum value.
How to Cite:
Abdukadirov M.A., Azamatov Z.T., Ganiyev A.S., Muminov R.A., Axmedova N.A., (2017), PROPERTIES OF GAAS/ALGAAS HETEROPHOTOTRANSFORMATORS WITH HOLOGRAPHIC CONCENTRATORS. Computational Nanotechnology, 1: 50-51.
Reference list:
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Afyan V.V., Vartanyan A.V. Sb. statey Kontsentratory solnechnogo izlucheniya dlya fotoelektricheskikh ustanovok pod. red. V.A. Grilikhesa. Energoatomizdat. 1986. S. 19-23
Muminov R.A., Azamatov Z.T., Akbarova N.A. i dr. Geliotekhnika. 2014. №3. S. 31-32.
Grilikhes V.A., Orlov P.P., Popov L.B. Solnechnaya energiya i kosmicheskie polety. Nauka. 1984. 216 s.
Keywords:
solar cell, semiconductor, gallium arsenide, spectral range, short-circuit current, the open-circuit voltage, holographic concentrator.