Scaling Models of Electrical Properties of Photo- and Beta-Converters with Nano-Heterojunctions
( Pp. 138-146)
More about authors
Dolgopolov Mikhail V.
Samara State Technical University
Samara, Russian Federation Elisov Maksim V.
Samara National Research University named after Academician S.P. Korolev
Samara, Russian Federation Radzhapov Sali A.
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Chipura Alexander S.
Samara State Technical University
Samara, Russian Federation Elisov Maksim V.
Samara National Research University named after Academician S.P. Korolev
Samara, Russian Federation Radzhapov Sali A.
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Chipura Alexander S.
Abstract:
The new methodology is developed and the computer simulation of scaling the electrical properties of nanochips-generators of a semiconductor energy converter based on nanoscale contact heterojunctions to ensure maximum power is considered. The variant of optimization of the scaling solution is represented by the connection of nanoheterojunctions with an increase in the current density of nonequilibrium carriers and the open circuit voltage. A generalized equivalent scheme for variations of internal properties and identification of experimental data is presented. The influence of the type of scaling and model parameters is analyzed.
How to Cite:
Dolgopolov M.V., Elisov M.V., Rajapov S.A., Chipura A.S. Scaling Models of Electrical Properties of Photo- and Beta-Converters with Nano-Heterojunctions. Computational Nanotechnology. 2023. Vol. 10. No. 1. Pp. 138–146. (In Rus.) DOI: 10.33693/2313-223X-2023-10-1-138-146
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Haken H. Synergetics. Berlin-Heidelberg: Springer, 1977.
Shchukin V.A., Ledentsov N.N., Kopev P.S., Bimberg D. Spontaneous ordering of arrays of coherent strained islands. Phys. Rev. Lett. 1995. Vol. 75. No. 16. Pp. 2968–2971.
Ledentsov N.N., Ustinov V.M., Ivanov S.V. et al. Ordered quantum-dot arrays in semiconducting matrices. Uspekhi fizicheskikh nauk. 1996. No. 39. Pp. 393–398.
Imamov E.Z., Muminov R.A., Rakhimov R.Kh. et al. Modeling of the electrical properties of a solar cell with many nano-hetero junctions. Computational Nanotechnology. 2022. Vol. 9. No. 4. Pp. 70–77. (In Rus.)
Chepurnov V.I., Radzhapov S.A., Dolgopolov M.V. et al. Efficiency determination problems for SiC*/Si microstructures and contact formation. Computational Nanotechnology. 2021. No. 3. Pp. 59–68. (In Rus.)
Chepurnov V.I., Puzyrnaya G.V., Gurskaya A.V. et al. Experimental investigation of semiconductor structures of the power source based on carbon-14. Physics of Wave Processes and Radio Engineering Systems. 2019. Vol. 22. № 3. Pp. 55–67. (In Rus.)
Physics of semiconductor converters / Acad. of the Russian Academy of Sciences, Prof. A.N. Saburov, Corr. Member, Tatarstan Academy of Sciences, Prof. S.V. Bulyansky (eds.). Moscow: RAS, 2018. 280 p.
Radzhapov S.A., Rakhimov R.Kh., Dzhanklich M. et al. Semiconductor nuclear radiation detectors on the basis of heterojunction structures of Al–αGe–pSi–Au for measurement of low intensive ionizing radiations. Computational Nanotechnology. 2018. No. 3. Pp. 65–67.
Akimchenko A., Chepurnov V., Dolgopolov M. et al. Betavoltaic device in por-SiC/Si C-Nuclear Energy Converter. EPJ Web of Conferences. 2017. Vol. 158.
Tsoi B. Patent in the Eurasian Patent Office. EP2405487 A1. 30.08.2012.
Tsoi B. Patent in the World Intellectual Property Organization. № WO 2011/040838 A2 04.07.2011.
Pikus G.E. Fundamentals of the theory of semiconductor devices. Moscow: Nauka, 1965. 448 p.
Rawa M., Calasan M., Abusorrah A. et al. Single diode solar cells–improved model and exact current–voltage analytical solution based on Lambert’s W function. Sensors. 2022. No. 22. P. 4173.
Gurskaya A.V., Dolgopolov M.V., Rajapov S.A., Chepurnov V.I. Contacts for SiC nano-microwatt energy converters. Moscow University Physics Bulletin. 2023. No. 1.
Gurskaya A.V., Chepurnov V.I., Latukhina N.V., Dolgopolov M.V. Method for obtaining a porous layer of Silicon Carbide heterostructure on a Silicon Substrate. Patent of the Russian Federation No. 2653398 publ. 24.01.2018. Byul. No. 3, priority 19.07.2016.
Dolgopolov M.V., Surnin O.L., Chepurnov V.I. Device for generating electric current by converting the energy of radiochemical beta decay of C-14. Patent of the Russian Federation No. 2714690 publ. 19.02.2020. Byul. No. 5.
Keywords:
scaling, nano-heterojunction, current-voltage characteristic, semiconductor converter, mathematical modeling, silicon carbide heterostructures, alloying, energy efficiency, semiconductor microgenerators of ionization currents and voltages, charge point defect formation, equivalent circuit.
