Scaling Models of Electrical Properties of Photo- and Beta-Converters with Nano-Heterojunctions
( Pp. 138-146)

More about authors
Dolgopolov Mikhail V.
Samara State Technical University
Samara, Russian Federation Elisov Maksim V.
Samara National Research University named after Academician S.P. Korolev
Samara, Russian Federation Radzhapov Sali A.
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Chipura Alexander S.
Abstract:
The new methodology is developed and the computer simulation of scaling the electrical properties of nanochips-generators of a semiconductor energy converter based on nanoscale contact heterojunctions to ensure maximum power is considered. The variant of optimization of the scaling solution is represented by the connection of nanoheterojunctions with an increase in the current density of nonequilibrium carriers and the open circuit voltage. A generalized equivalent scheme for variations of internal properties and identification of experimental data is presented. The influence of the type of scaling and model parameters is analyzed.
How to Cite:
Dolgopolov M.V., Elisov M.V., Rajapov S.A., Chipura A.S. Scaling Models of Electrical Properties of Photo- and Beta-Converters with Nano-Heterojunctions. Computational Nanotechnology. 2023. Vol. 10. No. 1. Pp. 138–146. (In Rus.) DOI: 10.33693/2313-223X-2023-10-1-138-146
Reference list:
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Keywords:
scaling, nano-heterojunction, current-voltage characteristic, semiconductor converter, mathematical modeling, silicon carbide heterostructures, alloying, energy efficiency, semiconductor microgenerators of ionization currents and voltages, charge point defect formation, equivalent circuit.


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