Mathematical modeling of the diffusion process of a semiconductor detector
( Pp. 68-71)

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Muminov Ramizulla A. doktor fiziko-matematicheskih nauk, professor, akademik
Institute of Materials Science, SPA “Physics-Sun”, Academy of Science of Uzbekistan Toshmurodov Yorkin K. kandidat tehnicheskih nauk, docent
Karshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers Ergashev Giyosjon J. starshiy nauchnyy sotrudnik
Institute of Materials Science, SPA “Physics-Sun”, Academy of Science of Uzbekistan Yavqochdiyev Mahmodjon O. assistent
Karshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers
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Abstract:
The article considers mathematical modeling of the technological process of drift of coordinate-sensitive detectors based on silicon with nuclear radiation, the sensor size of which is 50 × 50 × 1.5 mm and 8 bands, and compares them.
How to Cite:
Muminov R.A., Toshmurodov Y.K., Ergashev G.J., Yavqochdiyev M.O., (2020), MATHEMATICAL MODELING OF THE DIFFUSION PROCESS OF A SEMICONDUCTOR DETECTOR. Computational Nanotechnology, 4: 68-71. DOI: 10.33693/2313-223X-2020-7-4-68-71
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Keywords:
diffusion, drift, surface concentration, diffusion, activation, energy.