TWO TRNASITIVE AlxGa1-xP / GaP / GayIn1-yP PHOTODIODES WITH A SELECTIVE SENSITIVITY IN A VIOELET AND THE MIDDLE OF THE ULTRAVIOLET BAND OF THE SPECTRUM
( Pp. 24-26)
More about authors
Abdukadirov Muhitdin Abdurashitovich
d-r tehn. nauk, professor
Tashkent University of information Technologies Axmedova Nodira Amindjanovna kand. fiz.-mat. nauk, docent
Tashkent University of information Technologies Ganiyev Abror Sattarovich kand. fiz.-mat. nauk, docent
Tashkent University of information Technologies
Tashkent University of information Technologies Axmedova Nodira Amindjanovna kand. fiz.-mat. nauk, docent
Tashkent University of information Technologies Ganiyev Abror Sattarovich kand. fiz.-mat. nauk, docent
Tashkent University of information Technologies
Abstract:
Structures and photoelectric properties of two-transition hetero-photo-diode structures based on AlxGa1-xP (0≤x≤0.6) and GayIn1-yP (0.6≤y≤0.7), as well as their main parameters, are presented. It is shown that investigated heterophotodiodesstudied have a divided spectral response in the violet and ultraviolet (UV) bands of the spectrum, promising in the systems of absorption spectrophotometric analysis and control of burning of organic substances by a differential method.
How to Cite:
Abdukadirov M.A., Axmedova N.A., Ganiyev A.S., (2017), TWO TRNASITIVE ALXGA1-XP / GAP / GAYIN1-YP PHOTODIODES WITH A SELECTIVE SENSITIVITY IN A VIOELET AND THE MIDDLE OF THE ULTRAVIOLET BAND OF THE SPECTRUM. Computational Nanotechnology, 3 => 24-26.
Reference list:
Alferov ZH.I. Istoriya i budushchee poluprovodnikovykh geterostruktur. FTP. 1988. T.32. №1.S. 3-18.
KHvostikov V.P., Vlasov A.S., Sorokina S.V., Potapovich N.S. Timoshina N.KH., SHCHvarts M.Z., Andreev V.M. Vysokoeffektivnyy kaskad fotopreobrazovateley v sisteme so spektral nym rasshchepleniem solnechnogo izlucheniya. FTP. 2011. T.45. Vyp.6. S.810-815
Nemets V.M., Petrov A.A., Solov ev A.A. Spektral nyy analiz neorganicheskikh veshchestv. M.KHimiya.1988. 240c.
Tekhnika opticheskoy svyazi. Fotopriemniki. Per.s angl. pod.red. U. Tsanga. M.Mir.1988. 526c.
KHvostikov V.P., Vlasov A.S., Sorokina S.V., Potapovich N.S. Timoshina N.KH., SHCHvarts M.Z., Andreev V.M. Vysokoeffektivnyy kaskad fotopreobrazovateley v sisteme so spektral nym rasshchepleniem solnechnogo izlucheniya. FTP. 2011. T.45. Vyp.6. S.810-815
Nemets V.M., Petrov A.A., Solov ev A.A. Spektral nyy analiz neorganicheskikh veshchestv. M.KHimiya.1988. 240c.
Tekhnika opticheskoy svyazi. Fotopriemniki. Per.s angl. pod.red. U. Tsanga. M.Mir.1988. 526c.
Keywords:
semiconductor, heterostructure, photosensitivity, the photovoltaic properties, heteropodidae.
Related Articles
3. NANOSTRUCTURED MATERIALS Pages: 22-23 Issue №10450
THERMAL PROPERTIES OF GaAs/AlGaAs OF SOLAR ELEMENTS «TRANSPARENT» FOR THE LONG-WAVE TERRACE OF THE MAIN ABSORPTION STRIP
heterostructure
solid solution
the band gap
narrow-gap semiconductor coefficient of thermal conductivity
temperature coefficient
Show more
Development of Functional Nanomaterials Based on Nanoparticles and Polymer Nanostructures Pages: 73-79 DOI: 10.33693/2313-223X-2022-9-2-73-79 Issue №21224
Features of the Electrical Properties of Heterojunctions n-GaAs-p-(GaAs)1 - x - у(Ge2)x(ZnSe)y
Solid solution
heterostructure
mobility
concentration
current-voltage and capacitive-voltage characteristics
Show more
7. NANOSTRUCTURED MATERIALS Pages: 50-51 Issue №9439
PROPERTIES OF GaAs/AlGaAs HETEROPHOTOTRANSFORMATORS WITH HOLOGRAPHIC CONCENTRATORS
solar cell
semiconductor
gallium arsenide
spectral range
short-circuit current
Show more
Power stations. Pages: 83-90 Issue №12384
INVESTIGATION OF MODIFIED PHOTODIODE STRUCTURES WITH INTERLACED TRANSITIONS FOR OPTICAL POWER LOSS METER
the optical signal
photodiode
the phototransistor
photosensitivity
photodiode structure
Show more