TWO TRNASITIVE AlxGa1-xP / GaP / GayIn1-yP PHOTODIODES WITH A SELECTIVE SENSITIVITY IN A VIOELET AND THE MIDDLE OF THE ULTRAVIOLET BAND OF THE SPECTRUM
( Pp. 24-26)
More about authors
Abdukadirov Muhitdin Abdurashitovich
d-r tehn. nauk, professor
Tashkent University of information Technologies Axmedova Nodira Amindjanovna kand. fiz.-mat. nauk, docent
Tashkent University of information Technologies Ganiyev Abror Sattarovich kand. fiz.-mat. nauk, docent
Tashkent University of information Technologies
Tashkent University of information Technologies Axmedova Nodira Amindjanovna kand. fiz.-mat. nauk, docent
Tashkent University of information Technologies Ganiyev Abror Sattarovich kand. fiz.-mat. nauk, docent
Tashkent University of information Technologies
Abstract:
Structures and photoelectric properties of two-transition hetero-photo-diode structures based on AlxGa1-xP (0≤x≤0.6) and GayIn1-yP (0.6≤y≤0.7), as well as their main parameters, are presented. It is shown that investigated heterophotodiodesstudied have a divided spectral response in the violet and ultraviolet (UV) bands of the spectrum, promising in the systems of absorption spectrophotometric analysis and control of burning of organic substances by a differential method.
How to Cite:
Abdukadirov M.A., Axmedova N.A., Ganiyev A.S., (2017), TWO TRNASITIVE ALXGA1-XP / GAP / GAYIN1-YP PHOTODIODES WITH A SELECTIVE SENSITIVITY IN A VIOELET AND THE MIDDLE OF THE ULTRAVIOLET BAND OF THE SPECTRUM. Computational Nanotechnology, 3 => 24-26.
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Keywords:
semiconductor, heterostructure, photosensitivity, the photovoltaic properties, heteropodidae.
