THERMAL PROPERTIES OF GaAs/AlGaAs OF SOLAR ELEMENTS «TRANSPARENT» FOR THE LONG-WAVE TERRACE OF THE MAIN ABSORPTION STRIP
( Pp. 22-23)
Abdukadirov Muhitdin Abdurashitovich
Axmedova Nodira Amindjanovna
Ganiyev Abror Sattarovich
Muminov Ramizulla A.
More about authors
Abdukadirov Muhitdin Abdurashitovich
d-r tehn. nauk, professor
Tashkent University of information Technologies Axmedova Nodira Amindjanovna kand. fiz.-mat. nauk, docent
Tashkent University of information Technologies Ganiyev Abror Sattarovich kand. fiz.-mat. nauk, docent
Tashkent University of information Technologies Muminov Ramizulla A. Academician, Doct. Sci. (Phys. and Math.), Professor
Physical-Technical Institute of the SPA “Physics-Sun” of the Academy of Science of Uzbekistan
Tashkent, Republic of Uzbekistan
Tashkent University of information Technologies Axmedova Nodira Amindjanovna kand. fiz.-mat. nauk, docent
Tashkent University of information Technologies Ganiyev Abror Sattarovich kand. fiz.-mat. nauk, docent
Tashkent University of information Technologies Muminov Ramizulla A. Academician, Doct. Sci. (Phys. and Math.), Professor
Physical-Technical Institute of the SPA “Physics-Sun” of the Academy of Science of Uzbekistan
Tashkent, Republic of Uzbekistan
Abstract:
The work is devoted to investigation of thermal properties of solar cells based on GaAs / AlGaAs / GaP heterostructures with a total thickness of a highly absorbing GaAs layer not exceeding the sum of the diffusion length of minority carriers and a two-sided contact grid. It is shown that on the basis of such heterostructures, it is possible to create solar cells operating in the regime of natural convective heat transfer up to 100 times concentration of the solar flux.
How to Cite:
Abdukadirov M.A., Axmedova N.A., Ganiyev A.S., Muminov R.A., (2017), THERMAL PROPERTIES OF GAAS/ALGAAS OF SOLAR ELEMENTS «TRANSPARENT» FOR THE LONG-WAVE TERRACE OF THE MAIN ABSORPTION STRIP. Computational Nanotechnology, 3 => 22-23.
Reference list:
Andreev V.M., Grilikhes V.A., Rumyantsev V.D. Fotoelektricheskoe preobrazovanie kontsentrirovannogo solnechnogo izlucheniya. L.: Nauka.1989. 310s.
Dul nev G.N., Parfenov V.G., Sigalov A.V. Metody rascheta teplovogo rezhima priborov. M.: Radio i svyaz . 1990. 312s.
Ufimtsev B.F., Akchurin R.KH. Fiziko-khimicheskie osnovy zhidkofaznoy epitaksii. M.: Metallurgiya. 1983. 211s.
Marina L.I., Nashel skiy A.YA., Kolesnik L.I. Poluprovodnikovye fosfidy AIIIVV i tverdye rastvory na ikh osnove. M.: Metallurgiya.1974. 232s.
Dul nev G.N., Parfenov V.G., Sigalov A.V. Metody rascheta teplovogo rezhima priborov. M.: Radio i svyaz . 1990. 312s.
Ufimtsev B.F., Akchurin R.KH. Fiziko-khimicheskie osnovy zhidkofaznoy epitaksii. M.: Metallurgiya. 1983. 211s.
Marina L.I., Nashel skiy A.YA., Kolesnik L.I. Poluprovodnikovye fosfidy AIIIVV i tverdye rastvory na ikh osnove. M.: Metallurgiya.1974. 232s.
Keywords:
heterostructure, solid solution, the band gap, narrow-gap semiconductor coefficient of thermal conductivity, temperature coefficient.
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