THE IONIZING RADIATION DETECTORS BASED ON NEUTRON-DOPED SILICON
( Pp. 136-137)
More about authors
Muminov Ramizulla A.
Academician, Dr. Sci. (Phys.-Math.), Professor
Physical-Technical Institute of the SPA “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Radzhapov Sali A. Dr. Sci. (Phys.-Math.); Chief Researcher at the Laboratory of Semiconductor High-sensitivity Sensors
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Rakhimov Rustam Kh. Dr. Sci. (Eng.); Head at the Laboratory No. 1
Institute of Materials Science of the SPA “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Radzhapov Begjan S. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan
Physical-Technical Institute of the SPA “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Radzhapov Sali A. Dr. Sci. (Phys.-Math.); Chief Researcher at the Laboratory of Semiconductor High-sensitivity Sensors
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Rakhimov Rustam Kh. Dr. Sci. (Eng.); Head at the Laboratory No. 1
Institute of Materials Science of the SPA “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Radzhapov Begjan S. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan
Abstract:
The article considers features of development of detectors of ionizi-roumega radiation with the working area S≥30 mm2 and a thickness of W>0.2 mm, based on single crystals of compensated neutron doping of silicon. Peculiarities of electrophysical and spectral characteristics.
How to Cite:
Muminov R.A., Radzhapov S.A., Rakhimov R.K., Radzhapov B.S., (2016), THE IONIZING RADIATION DETECTORS BASED ON NEUTRON-DOPED SILICON. Computational Nanotechnology, 4 => 136-137.
Reference list:
L.S. Smirnov, S.P.Solov ev, V.F. Stas , V.A.KHarchenko. Legirovanie poluprovodnikov metodom yadernykh reaktsiy / Otvet. redak. L.S. Smirnov. - Novosibirsk: Nauka, 1981. - 181 s.
Azimov S.A., Muminov R.A., SHamirzaev S.KH., YAfasov A.YA. Kremniy-litievye detektory yadernogo izlucheniya. // - Tashkent: Fan.1981.-257 s.
Radzhapova S.A. Osobennosti fizicheskikh protsessov formirovaniya kremniy-litievogo detektora yadernogo izlucheniya s bol shoy chuvstvitel noy oblast yu// Avtoref. Dis. dok. d.f-m.n. - Tashkent: 2010.
R. A. Muminov, S. A. Radzhapov, Yo.K. Toshmurodov, Sh. Risalieva, S. Bekbaev, and A. Kurmantaev // Development and Optimization of the Production Technology of Large Size Position Sensitive Detectors // Instruments and Experimental Techniques. - New York - 2014 Vol. 57, No. 5, pp. 564-565.
R.A. Muminov, S.A. Radzhapov, Yo.K. Toshmurodov S. Bekbaev. //Silicon-Lithium Nuclear Radiation Detectors with a Large Surface of Sensitive area // Uzbek journal of Physics 2013. rr. 179-184.
R.A. Muminov, S.A. Radzhapov, YE.K. Toshmurodov. // Elektrofizicheskie kharakteristiki raznykh tipov kremnievykh detektorov yadernogo izlucheniya s bol shoy poverkhnost yu chuvstvitel noy oblasti// Uzbek journal of Physics. 2014. № 3-4.
Muminov R.A., Radzhapov S.A., Toshmurodov YE.K., Radzhapov B.S. //Osobennosti tekhnologii formirovaniya Si(Li) p-i-n detektorov yadernogo izlucheniya bol shikh razmerov. Computational nanotechnology № 1. 2016 g. c. 62-66
Azimov S.A., Muminov R.A., SHamirzaev S.KH., YAfasov A.YA. Kremniy-litievye detektory yadernogo izlucheniya. // - Tashkent: Fan.1981.-257 s.
Radzhapova S.A. Osobennosti fizicheskikh protsessov formirovaniya kremniy-litievogo detektora yadernogo izlucheniya s bol shoy chuvstvitel noy oblast yu// Avtoref. Dis. dok. d.f-m.n. - Tashkent: 2010.
R. A. Muminov, S. A. Radzhapov, Yo.K. Toshmurodov, Sh. Risalieva, S. Bekbaev, and A. Kurmantaev // Development and Optimization of the Production Technology of Large Size Position Sensitive Detectors // Instruments and Experimental Techniques. - New York - 2014 Vol. 57, No. 5, pp. 564-565.
R.A. Muminov, S.A. Radzhapov, Yo.K. Toshmurodov S. Bekbaev. //Silicon-Lithium Nuclear Radiation Detectors with a Large Surface of Sensitive area // Uzbek journal of Physics 2013. rr. 179-184.
R.A. Muminov, S.A. Radzhapov, YE.K. Toshmurodov. // Elektrofizicheskie kharakteristiki raznykh tipov kremnievykh detektorov yadernogo izlucheniya s bol shoy poverkhnost yu chuvstvitel noy oblasti// Uzbek journal of Physics. 2014. № 3-4.
Muminov R.A., Radzhapov S.A., Toshmurodov YE.K., Radzhapov B.S. //Osobennosti tekhnologii formirovaniya Si(Li) p-i-n detektorov yadernogo izlucheniya bol shikh razmerov. Computational nanotechnology № 1. 2016 g. c. 62-66
Keywords:
monocrystalline silicon, neutron-doped silicon, the "input" and "output" window of the detector, degradation, energy resolution.
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