DETECTORS OF X-RAY AND GAMMA RADIATION ON THE BASIS OF AL-nGe-pSi-Au STRUCTURE
( Pp. 27-28)

More about authors
Muminov Ramizulla A.
Физико-технический институт Научно-производственного объединения «Физика-Солнце» Академии наук Республики Узбекистан
г. Ташкент, Республика Узбекистан Radzhapov Sali A.
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Toshmurodov Yorkin K. kandidat tehnicheskih nauk, docent
Karshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers Radzhapov Begjan S. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan
Abstract:
This paper, features of the development of nuclear radiation detectors 10 mm and thicknesses 1.4 mm of the sensitive region based on Al-nGe-pSi-Au structures are presented. The features of their volt-ampere and radiometric characteristics are shown.
How to Cite:
Muminov R.A., Radzhapov S.A., Toshmurodov Y.K., Radzhapov B.S., (2017), DETECTORS OF X-RAY AND GAMMA RADIATION ON THE BASIS OF AL-NGE-PSI-AU STRUCTURE. Computational Nanotechnology, 3 => 27-28.
Reference list:
Akimov YU.K. i dr. Poluprovodnikovye detektory i eksperimental noy fiziki. -M.: Energatomizdat, 1989. -271s.
Keywords:
semiconducting Al-nGe-pSi-Au detector, monocrystalline silicon, sensitive area, the "dead" layer.


Related Articles

PLASMA, HIGH FREQUENCY, MICROWAVE AND LASER TECHNOLOGIES Pages: 136-137 Issue №8242
THE IONIZING RADIATION DETECTORS BASED ON NEUTRON-DOPED SILICON
monocrystalline silicon neutron-doped silicon the "input" and "output" window of the detector degradation energy resolution
Show more
4. ENGINEERING TECHNOLOGIES. NUCLEAR TECHNOLOGY Pages: 62-66 Issue №6518
TECHNOLOGICAL FORMATION OF LARGE-SIZE Si(Li) p-i-n RADIATION DETECTORS
a semiconductor Si(Li) p-i-n detector monocrystalline silicon diffusion drift Li
Show more