DETECTORS OF X-RAY AND GAMMA RADIATION ON THE BASIS OF AL-nGe-pSi-Au STRUCTURE
( Pp. 27-28)

More about authors
Muminov Ramizulla A. Academician, Dr. Sci. (Phys.-Math.), Professor
Physical-Technical Institute of the SPA “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Radzhapov Sali A. Dr. Sci. (Phys.-Math.); Chief Researcher at the Laboratory of Semiconductor High-sensitivity Sensors
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Toshmurodov Yorkin K. kandidat tehnicheskih nauk, docent
Karshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers Radzhapov Begjan S. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan
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Abstract:
This paper, features of the development of nuclear radiation detectors 10 mm and thicknesses 1.4 mm of the sensitive region based on Al-nGe-pSi-Au structures are presented. The features of their volt-ampere and radiometric characteristics are shown.
How to Cite:
Muminov R.A., Radzhapov S.A., Toshmurodov Y.K., Radzhapov B.S., (2017), DETECTORS OF X-RAY AND GAMMA RADIATION ON THE BASIS OF AL-NGE-PSI-AU STRUCTURE. Computational Nanotechnology, 3 => 27-28.
Reference list:
Akimov YU.K. i dr. Poluprovodnikovye detektory i eksperimental noy fiziki. -M.: Energatomizdat, 1989. -271s.
Keywords:
semiconducting Al-nGe-pSi-Au detector, monocrystalline silicon, sensitive area, the "dead" layer.


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