IVESTIGATING OF SOME CHARACTERISTICS OF AN APT-STRUCTURE WITH ISOVALENT IMPURITIES IN ORDER TO CREATE DEVICES FOR MEASURING AND NON-DESTRUCTIVE CONTROLLING
( Pp. 72-75)
Kasimakhunova Anarkhan Mamasadikovna
Naymanbayev Raxmanali
Mamadalieva Lola Kamildzhanovna
Nurdinova Raziyaxon Abdihalikovna
Olimov Shoirbek Abdukohhorovich
More about authors
Kasimakhunova Anarkhan Mamasadikovna
professor, doktor tehnicheskih nauk
Fergana Polytechnic Institute. Fergana, Uzbekistan Naymanbayev Raxmanali docent, kandidat tehnicheskih nauk
Fergana Polytechnic Institute. Fergana, Uzbekistan Mamadalieva Lola Kamildzhanovna docent, kandidat tehnicheskih nauk
Fergana Polytechnic Institute. Fergana, Uzbekistan Nurdinova Raziyaxon Abdihalikovna doktorant
Fergana Polytechnic Institute. Fergana, Uzbekistan Olimov Shoirbek Abdukohhorovich doktorant
Fergana Polytechnic Institute. Fergana, Uzbekistan
Fergana Polytechnic Institute. Fergana, Uzbekistan Naymanbayev Raxmanali docent, kandidat tehnicheskih nauk
Fergana Polytechnic Institute. Fergana, Uzbekistan Mamadalieva Lola Kamildzhanovna docent, kandidat tehnicheskih nauk
Fergana Polytechnic Institute. Fergana, Uzbekistan Nurdinova Raziyaxon Abdihalikovna doktorant
Fergana Polytechnic Institute. Fergana, Uzbekistan Olimov Shoirbek Abdukohhorovich doktorant
Fergana Polytechnic Institute. Fergana, Uzbekistan
Abstract:
This paper presents semiconductor films doped with isovalent impurities with an anomalously large photoelectric effect. An APT-photodetector of autonomous type with stable parameters and good degradation characteristics is presented and as a result optoelectronic voltage measuring transformers (OVMT) and current (OCMT) have been developed.
How to Cite:
Kasimakhunova A.M., Naymanbayev R.., Mamadalieva L.K., Nurdinova R.A., Olimov S.A., (2018), IVESTIGATING OF SOME CHARACTERISTICS OF AN APT-STRUCTURE WITH ISOVALENT IMPURITIES IN ORDER TO CREATE DEVICES FOR MEASURING AND NON-DESTRUCTIVE CONTROLLING. Computational Nanotechnology, 2 => 72-75.
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Ravich YU.I. Fotomagnitnyy effekt poluprovodnikakh i ego primenenie. M.: Sovetskoe radio, 1967.
Fotoelektricheskie yavleniya v poluprovodnikakh i optoelektronika / pod. red. E.I. Adirovicha. Tashkent: FAN, 1972. S. 143-229.
Naymanboev R. Izv. AN UzSSR. Ser.: Fiz.-mat. nauki. № 6.
Karimov B.KH. Izvestiya Tomskogo politekhnicheskogo universiteta, 2009. T. 314, № 2.
Kasimakhunova A.M., Nurdinova R.A. AFN-elementy s dvoynym lucheprelomleniem // Uzbek Jornal of Physics, 2017. Vol. 19, № 5. Pr. 302-306.
Materialy II Mezhdunarodnoy konferentsii Opticheskie yavleniya v poluprovodnikovykh mikro- i nanostrukturakh . Fergana, 8-9 sentyabrya 2011 g. S. 179.
Ergashev ZH. Izv. AN UzSSR. Ser.: Fiz.-mat. nauki, 1978. № 2. S. 60.
Fridkin V.M. Fotosegnetoelektriki. M.: Nauka, 1979.
Keywords:
abnormal fotoaparata (AFS), photodetectors, electro-optical and magneto-optical phenomena AFS structures, fotoelektronnoi condition.
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