IVESTIGATING OF SOME CHARACTERISTICS OF AN APT-STRUCTURE WITH ISOVALENT IMPURITIES IN ORDER TO CREATE DEVICES FOR MEASURING AND NON-DESTRUCTIVE CONTROLLING
( Pp. 72-75)

More about authors
Kasimakhunova Anarkhan Mamasadikovna professor, doktor tehnicheskih nauk
Fergana Polytechnic Institute. Fergana, Uzbekistan Naymanbayev Raxmanali docent, kandidat tehnicheskih nauk
Fergana Polytechnic Institute. Fergana, Uzbekistan Mamadalieva Lola Kamildzhanovna docent, kandidat tehnicheskih nauk
Fergana Polytechnic Institute. Fergana, Uzbekistan Nurdinova Raziyaxon Abdihalikovna doktorant
Fergana Polytechnic Institute, Fergana, Uzbekistan Olimov Shoirbek Abdukohhorovich doktorant
Fergana Polytechnic Institute. Fergana, Uzbekistan
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Abstract:
This paper presents semiconductor films doped with isovalent impurities with an anomalously large photoelectric effect. An APT-photodetector of autonomous type with stable parameters and good degradation characteristics is presented and as a result optoelectronic voltage measuring transformers (OVMT) and current (OCMT) have been developed.
How to Cite:
Kasimakhunova A.M., Naymanbayev R.., Mamadalieva L.K., Nurdinova R.A., Olimov S.A., (2018), IVESTIGATING OF SOME CHARACTERISTICS OF AN APT-STRUCTURE WITH ISOVALENT IMPURITIES IN ORDER TO CREATE DEVICES FOR MEASURING AND NON-DESTRUCTIVE CONTROLLING. Computational Nanotechnology, 2: 72-75.
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Keywords:
abnormal fotoaparata (AFS), photodetectors, electro-optical and magneto-optical phenomena AFS structures, fotoelektronnoi condition.