FEATURES OF THE DEVELOPMENT OF MANUFACTURING TECHNOLOGY FOR SURFACE-BARRIER DETECTORS OF LARGE DIAMETER WITH A LARGE WORKING AREA SENSITIVE FOR MEASURING THE ACTIVITY OF NATURAL ISOTOPES
( Pp. 151-154)

More about authors
Radzhapov Sali A. Dr. Sci. (Phys.-Math.); Chief Researcher at the Laboratory of Semiconductor High-sensitivity Sensors
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Radzhapov Begjan S. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan Rakhimov Rustam Kh. Dr. Sci. (Eng.); Head at the Laboratory No. 1
Institute of Materials Science of the SPA “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan
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Abstract:
The article deals with the development of the technology of manufacturing surface-barrier detectors (PDDs) of large diameter, as well as studies of electrophysical and radiometric characteristics.
How to Cite:
Radzhapov S.A., Radzhapov B.S., Rakhimov R.K., (2018), FEATURES OF THE DEVELOPMENT OF MANUFACTURING TECHNOLOGY FOR SURFACE-BARRIER DETECTORS OF LARGE DIAMETER WITH A LARGE WORKING AREA SENSITIVE FOR MEASURING THE ACTIVITY OF NATURAL ISOTOPES. Computational Nanotechnology, 1 => 151-154.
Reference list:
Akimov YU.K. i dr. Poluprovodnikovye detektory i eksperimental noy fiziki. M.: Energatomizdat, 1989. 271 s.
Azimov S.A., Muminov R.A., SHamirzaev S.KH., YAfasov A.YA. Kremniy-litievye detektory yadernogo izlucheniya. Tashkent: Fan, 1981. 257 s.
Radzhapov S.A. Osobennosti fizicheskikh protsessov formirovaniya kremniy-litievogo detektora yadernogo izlucheniya s bol shoy chuvstvitel noy oblast yu // Avtoref. dis. d-ra f.-m. nauk. - Tashkent, 2010.
Muminov R.A., Radzhapov S.A., and Saimbetov A.K. Developing Si (Li) Nuclear Radiation Detectors by Pulsed Electric Field Treatment // Technical Physics Letters. New York, 2009. Vol. 35, № 8. Rp. 768-769.
Patent RUz № IAP 04073 Muminov R.A., Radzhapov S.A., Pindyurin Y.S., Saymbetov A.K. Method for manufacturing a Si (Li) pin Structure, 2012.
Keywords:
semiconductor surface-barrier detector, monocrystalline silicon n-type, alpha radiation.


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