TECHNOLOGICAL FORMATION OF LARGE-SIZE Si(Li) p-i-n RADIATION DETECTORS
( Pp. 62-66)

More about authors
Muminov Ramizulla Abdullaevich akademik Akademii nauk respubliki Uzbekistan, glavnyy nauchnyy sotrudnik
Physical-Technical Institute, «Physics-Sun» Uzbekistan Academy of sciences Rajapov Sali A. doktor fiziko-matematicheskih nauk; glavnyy nauchnyy sotrudnik laboratorii poluprovodnikovyh vysokochuvstvitelnyh datchikov
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Toshmurodov Yorkin Kaxramonovich aspirant
Physical-technical Institute, SPA «Physics-Sun» Academy of Sciences of Uzbekistan Radzhapov Begjan S. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan
For read the full article, please, register or log in
Abstract:
In this report we consider physical and technological features of manufacture Si(Li) nuclear radiation detectors of large size (Ø≥60 mm, W=4 mm) when necessary for the formation of Si(Li) structure using a new method of carrying out the process of drift of lithium ions with the help of pulsed electric field.
How to Cite:
Muminov R.A., Rajapov S.A., Toshmurodov Y.K., Radzhapov B.S., (2016), TECHNOLOGICAL FORMATION OF LARGE-SIZE SI(LI) P-I-N RADIATION DETECTORS. Computational Nanotechnology, 1: 62-66.
Reference list:
Azimov S.A., Muminov R.A., SHamirzaev S.KH. YAfasov A.YA. Kremniy-litievye detektory yadernogo izlucheniya. -Tashkent.: Fan, 1981.-257s.
Reyvi K.V. Defekty i primesi v poluprovodnikovom kremnii. -M. Mir, 1984. -472 s.
Lazanu I., Lazanu S. Silicon detectors: from radiation hard devices operating beyond LHC conditions to the characterization of primary fourfold coordinated vacancy defects //Rom. Repts. Phys. 2008. - V. 57. -N. 3. -pp.345-355
Azimov S.A. Muminov R.A. Bayzakov B.B., i dr. Poluprovodnikovye detektory beta - izlucheniya bol shoy ploshchadi.// Atomnaya energiya. -Moskva, 1986. -T. 60. - Vyp.2. -S.144-146.
R.A. Muminov, S.A. Radzhapov, N.A. Sagyndykov and K.M. Nurbaev Salient feartures of the fabrication of Si(Li) detectors with a large-volume working region // Atomic Energy. - New York, Vol. 98, No. 1, 2005, pp. 69-71.
S.A. Radzhapov A Versatile Spectrometer Based on a Large-Volume Si(Li) p-i-n Structure // Instruments and Experimental Techiques.- New York, 2007, Vol. 50, No. 4, pp. 452-454.
R.A. Muminov, S.A. Radzhapov, and A.K. Saimbetov Developing Si(Li) Nuclear Radiation Detectors by Pulsed Electeic Field Treatment //Technical Physics Letters.- New York, 2009, Vol. 35, No. 8, pp. 768-769.
R.A. Muminov, S.A. Radzhapov and N.A. Sagyndykov A low-background -ray spectrometer with composite detecting modules // Instruments and Experimental Techiques.- New York , Vol. 48, No. 1, 2005, pp. 41-42.
Keywords:
a semiconductor Si(Li) p-i-n detector, monocrystalline silicon, diffusion, drift, Li, sensitive area.