TECHNOLOGICAL FORMATION OF LARGE-SIZE Si(Li) p-i-n RADIATION DETECTORS
( Pp. 62-66)
More about authors
Muminov Ramizulla A.
Academician, Doct. Sci. (Phys. and Math.), Professor
Physical-Technical Institute of the SPA “Physics-Sun” of the Academy of Science of Uzbekistan
Tashkent, Republic of Uzbekistan Radzhapov Sali A.
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Toshmurodov Yorkin K. kandidat tehnicheskih nauk, docent
Karshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers Radzhapov Begjan S. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan
Physical-Technical Institute of the SPA “Physics-Sun” of the Academy of Science of Uzbekistan
Tashkent, Republic of Uzbekistan Radzhapov Sali A.
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Toshmurodov Yorkin K. kandidat tehnicheskih nauk, docent
Karshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers Radzhapov Begjan S. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan
Abstract:
In this report we consider physical and technological features of manufacture Si(Li) nuclear radiation detectors of large size (Ø≥60 mm, W=4 mm) when necessary for the formation of Si(Li) structure using a new method of carrying out the process of drift of lithium ions with the help of pulsed electric field.
How to Cite:
Muminov R.A., Radzhapov S.A., Toshmurodov Y.K., Radzhapov B.S., (2016), TECHNOLOGICAL FORMATION OF LARGE-SIZE SI(LI) P-I-N RADIATION DETECTORS. Computational Nanotechnology, 1 => 62-66.
Reference list:
Azimov S.A., Muminov R.A., SHamirzaev S.KH. YAfasov A.YA. Kremniy-litievye detektory yadernogo izlucheniya. -Tashkent.: Fan, 1981.-257s.
Reyvi K.V. Defekty i primesi v poluprovodnikovom kremnii. -M. Mir, 1984. -472 s.
Lazanu I., Lazanu S. Silicon detectors: from radiation hard devices operating beyond LHC conditions to the characterization of primary fourfold coordinated vacancy defects //Rom. Repts. Phys. 2008. - V. 57. -N. 3. -pp.345-355
Azimov S.A. Muminov R.A. Bayzakov B.B., i dr. Poluprovodnikovye detektory beta - izlucheniya bol shoy ploshchadi.// Atomnaya energiya. -Moskva, 1986. -T. 60. - Vyp.2. -S.144-146.
R.A. Muminov, S.A. Radzhapov, N.A. Sagyndykov and K.M. Nurbaev Salient feartures of the fabrication of Si(Li) detectors with a large-volume working region // Atomic Energy. - New York, Vol. 98, No. 1, 2005, pp. 69-71.
S.A. Radzhapov A Versatile Spectrometer Based on a Large-Volume Si(Li) p-i-n Structure // Instruments and Experimental Techiques.- New York, 2007, Vol. 50, No. 4, pp. 452-454.
R.A. Muminov, S.A. Radzhapov, and A.K. Saimbetov Developing Si(Li) Nuclear Radiation Detectors by Pulsed Electeic Field Treatment //Technical Physics Letters.- New York, 2009, Vol. 35, No. 8, pp. 768-769.
R.A. Muminov, S.A. Radzhapov and N.A. Sagyndykov A low-background -ray spectrometer with composite detecting modules // Instruments and Experimental Techiques.- New York , Vol. 48, No. 1, 2005, pp. 41-42.
Reyvi K.V. Defekty i primesi v poluprovodnikovom kremnii. -M. Mir, 1984. -472 s.
Lazanu I., Lazanu S. Silicon detectors: from radiation hard devices operating beyond LHC conditions to the characterization of primary fourfold coordinated vacancy defects //Rom. Repts. Phys. 2008. - V. 57. -N. 3. -pp.345-355
Azimov S.A. Muminov R.A. Bayzakov B.B., i dr. Poluprovodnikovye detektory beta - izlucheniya bol shoy ploshchadi.// Atomnaya energiya. -Moskva, 1986. -T. 60. - Vyp.2. -S.144-146.
R.A. Muminov, S.A. Radzhapov, N.A. Sagyndykov and K.M. Nurbaev Salient feartures of the fabrication of Si(Li) detectors with a large-volume working region // Atomic Energy. - New York, Vol. 98, No. 1, 2005, pp. 69-71.
S.A. Radzhapov A Versatile Spectrometer Based on a Large-Volume Si(Li) p-i-n Structure // Instruments and Experimental Techiques.- New York, 2007, Vol. 50, No. 4, pp. 452-454.
R.A. Muminov, S.A. Radzhapov, and A.K. Saimbetov Developing Si(Li) Nuclear Radiation Detectors by Pulsed Electeic Field Treatment //Technical Physics Letters.- New York, 2009, Vol. 35, No. 8, pp. 768-769.
R.A. Muminov, S.A. Radzhapov and N.A. Sagyndykov A low-background -ray spectrometer with composite detecting modules // Instruments and Experimental Techiques.- New York , Vol. 48, No. 1, 2005, pp. 41-42.
Keywords:
a semiconductor Si(Li) p-i-n detector, monocrystalline silicon, diffusion, drift, Li, sensitive area.
Related Articles
4. PLASMA, HIGH FREQUENCY, MICROWAVE AND LASER TECHNOLOGIES Pages: 27-28 Issue №10450
DETECTORS OF X-RAY AND GAMMA RADIATION ON THE BASIS OF AL-nGe-pSi-Au STRUCTURE
semiconducting Al-nGe-pSi-Au detector
monocrystalline silicon
sensitive area
the "dead" layer
Show more
PLASMA, HIGH FREQUENCY, MICROWAVE AND LASER TECHNOLOGIES Pages: 136-137 Issue №8242
THE IONIZING RADIATION DETECTORS BASED ON NEUTRON-DOPED SILICON
monocrystalline silicon
neutron-doped silicon
the "input" and "output" window of the detector
degradation
energy resolution
Show more
Letters to the editor Pages: 68-71 DOI: 10.33693/2313-223X-2020-7-4-68-71 Issue №17956
Mathematical modeling of the diffusion process of a semiconductor detector
diffusion
drift
surface concentration
diffusion
activation
Show more
