TECHNOLOGICAL FORMATION OF LARGE-SIZE Si(Li) p-i-n RADIATION DETECTORS
( Pp. 62-66)

More about authors
Muminov Ramizulla A. Dr. Sci. (Phys.-Math.), Academician of the Academy Sciences of the Republic Uzbekistan
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Radzhapov Sali A. Dr. Sci. (Phys.-Math.); Chief Researcher at the Laboratory of Semiconductor High-sensitivity Sensors
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Toshmurodov Yorkin K. kandidat tehnicheskih nauk, docent
Karshi branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers Radzhapov Begjan S. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan
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Abstract:
In this report we consider physical and technological features of manufacture Si(Li) nuclear radiation detectors of large size (Ø≥60 mm, W=4 mm) when necessary for the formation of Si(Li) structure using a new method of carrying out the process of drift of lithium ions with the help of pulsed electric field.
How to Cite:
Muminov R.A., Radzhapov S.A., Toshmurodov Y.K., Radzhapov B.S., (2016), TECHNOLOGICAL FORMATION OF LARGE-SIZE SI(LI) P-I-N RADIATION DETECTORS. Computational Nanotechnology, 1 => 62-66.
Reference list:
Azimov S.A., Muminov R.A., SHamirzaev S.KH. YAfasov A.YA. Kremniy-litievye detektory yadernogo izlucheniya. -Tashkent.: Fan, 1981.-257s.
Reyvi K.V. Defekty i primesi v poluprovodnikovom kremnii. -M. Mir, 1984. -472 s.
Lazanu I., Lazanu S. Silicon detectors: from radiation hard devices operating beyond LHC conditions to the characterization of primary fourfold coordinated vacancy defects //Rom. Repts. Phys. 2008. - V. 57. -N. 3. -pp.345-355
Azimov S.A. Muminov R.A. Bayzakov B.B., i dr. Poluprovodnikovye detektory beta - izlucheniya bol shoy ploshchadi.// Atomnaya energiya. -Moskva, 1986. -T. 60. - Vyp.2. -S.144-146.
R.A. Muminov, S.A. Radzhapov, N.A. Sagyndykov and K.M. Nurbaev Salient feartures of the fabrication of Si(Li) detectors with a large-volume working region // Atomic Energy. - New York, Vol. 98, No. 1, 2005, pp. 69-71.
S.A. Radzhapov A Versatile Spectrometer Based on a Large-Volume Si(Li) p-i-n Structure // Instruments and Experimental Techiques.- New York, 2007, Vol. 50, No. 4, pp. 452-454.
R.A. Muminov, S.A. Radzhapov, and A.K. Saimbetov Developing Si(Li) Nuclear Radiation Detectors by Pulsed Electeic Field Treatment //Technical Physics Letters.- New York, 2009, Vol. 35, No. 8, pp. 768-769.
R.A. Muminov, S.A. Radzhapov and N.A. Sagyndykov A low-background -ray spectrometer with composite detecting modules // Instruments and Experimental Techiques.- New York , Vol. 48, No. 1, 2005, pp. 41-42.
Keywords:
a semiconductor Si(Li) p-i-n detector, monocrystalline silicon, diffusion, drift, Li, sensitive area.


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