FEATURES CLUSTER FORMATION ON THE SURFACE OF SEMICONDUCTOR CRYSTALS OF THE GROUP A3B5
( Pp. 40-44)

More about authors
Suchikova Yana Alexandrovna kandidat fiziko-matematicheskih nauk, docent
Berdyansk State Pedagogical University
Abstract:
The paper discusses the characteristics of cluster formation on the surface of semiconductors A3B5 in electrochemical processing. The mechanism of this phenomenon is described in terms of coherent phenomena in stochastic systems.
How to Cite:
Suchikova Y.A., (2016), FEATURES CLUSTER FORMATION ON THE SURFACE OF SEMICONDUCTOR CRYSTALS OF THE GROUP A3B5. Computational Nanotechnology, 1 => 40-44.
Reference list:
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Sychikova YA.A. Vliyanie sostava elektrolita na velichinu porogovogo napryazheniya nachala poroobrazovaniya fosfida indiya // Fizicheskaya inzheneriya poverkhnosti. - 2010. - T.8, №3. - S. 259 - 264.
Sichikova YA.O., Kidalov V.V., Balan O.S., Sukach G.O. Testuruvannya poverkhni fosfidu indiyu // ZHurnal nano- i elektronoi fiziki. - 2010, №1. - S. 84 - 88.
Sichikova YA.O., Kidalov V.V., Sukach G.O., Kirilash O.I. Metodika otrimannya ta doslidzhennya morfologii poruvatikh shariv p-InP ta p-GaAs // Elektronika ta zv yazok. - 2010. - T. 4, № 57. - S. 34 - 36.
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Keywords:
semiconductors, electrochemical etching, clusters, pores, stochastic system, coherent phenomena.


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