DEVELOPMENT OF SILICON DIFFUSION n-p-DETECTORS OF IONIZING RADIATION
( Pp. 112-116)

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Rajapov Sali A. doktor fiziko-matematicheskih nauk; glavnyy nauchnyy sotrudnik laboratorii poluprovodnikovyh vysokochuvstvitelnyh datchikov
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Rakhimov Rustam Kh. Dr. Sci. (Eng.); Head at the Laboratory No. 1
Institute of Materials Science of the SPA “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Radzhapov Begjan S. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan Zufarov Mars A. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan Vakhobov Kutbiddin Ilovitddinovich starshiy prepodavatel
Tashkent Technical University
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Abstract:
The paper presents an optimized manufacturing technology of silicon diffusion n-p detectors, as well as some research data on the spectrometric characteristics of silicon diffusion detectors of charged particles.
How to Cite:
Rajapov S.A., Rakhimov R.K., Radzhapov B.S., Zufarov M.A., Vakhobov K.I., (2019), DEVELOPMENT OF SILICON DIFFUSION N-P-DETECTORS OF IONIZING RADIATION. Computational Nanotechnology, 3: 112-116. DOI: 10.33693/2313-223X-2019-6-3-112-115
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