DEVELOPMENT OF SILICON DIFFUSION n-p-DETECTORS OF IONIZING RADIATION
( Pp. 112-116)
Radzhapov Sali A.
Rakhimov Rustam Kh.
Radzhapov Begjan S.
Zufarov Mars A.
Vakhobov Kutbiddin Ilovitddinovich
More about authors
Radzhapov Sali A.
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Rakhimov Rustam Kh. Dr. Sci. (Eng.); Head, Laboratory No. 1; Institute of Materials Science of the Academy of Sciences of the Republic of Uzbekistan; Institute of Renewable Energy Sources; Tashkent, Republic of Uzbekistan
Институт материаловедения Академии наук Республики Узбекистан
г. Ташкент, Республика Узбекистан Radzhapov Begjan S. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan Zufarov Mars A. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan Vakhobov Kutbiddin Ilovitddinovich starshiy prepodavatel
Tashkent Technical University
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Rakhimov Rustam Kh. Dr. Sci. (Eng.); Head, Laboratory No. 1; Institute of Materials Science of the Academy of Sciences of the Republic of Uzbekistan; Institute of Renewable Energy Sources; Tashkent, Republic of Uzbekistan
Институт материаловедения Академии наук Республики Узбекистан
г. Ташкент, Республика Узбекистан Radzhapov Begjan S. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan Zufarov Mars A. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan Vakhobov Kutbiddin Ilovitddinovich starshiy prepodavatel
Tashkent Technical University
Abstract:
The paper presents an optimized manufacturing technology of silicon diffusion n-p detectors, as well as some research data on the spectrometric characteristics of silicon diffusion detectors of charged particles.
How to Cite:
Radzhapov S.A., Rakhimov R.K., Radzhapov B.S., Zufarov M.A., Vakhobov K.I., (2019), DEVELOPMENT OF SILICON DIFFUSION N-P-DETECTORS OF IONIZING RADIATION. Computational Nanotechnology, 3 => 112-116.
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Azimov S.A., Muminov R.A., SHamirzaev S.KH., YAfasov A.YA. Kremniy-litievye detektory yadernogo izlucheniya. Tashkent: Fan, 1981. 257 s.
Radzhapov S.A.A Versatile spectrometer based on a large-volume Si(Li)-p-i-n-structure // Instruments and Experimental Techiques. New York, 2007. Vol. 50. № 4. R. 452-454.
Radzhapov S.A., Radzhapov B.S., Rakhimov R.KH. Osobennosti tekhnologiya izgotovlenie kremnievykh poverkhnostno-bar ernykh detektorov bol shoy chuvstvitel noy rabochey ploshchad yu dlya izmereniya aktivnosti estestvennykh izotopov // Computational Nanotechnology. 2018. № 1. S. 151-154.
Zaveryukhina N.N., Vakhobov K.I., Gaibov A.G. Akustostimulirovannaya diffuziya zolota v Au-Si-n-p-strukturakh // Doklady AH PUz. 2005. № 6. S. 20-23.
Gaibov A.G, Vakhobov K.I. Vliyanie ul trazvukovykh voln na adgezionnuyu prochnost zolotykh pokrytiy k kremniyu // Elektronnaya obrabotka materialov. Institut prikladnoy fiziki AN R Moldova. 2005. № 6. S. 75-78.
