DEVELOPMENT OF RADOMETER BASED ON SILICON DETECTORS WITH A BIG SENSITIVE AREA
( Pp. 65-68)

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Rajapov Sali A. doktor fiziko-matematicheskih nauk; glavnyy nauchnyy sotrudnik laboratorii poluprovodnikovyh vysokochuvstvitelnyh datchikov
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Rakhimov Rustam Kh. Dr. Sci. (Eng.); Head at the Laboratory No. 1
Institute of Materials Science of the SPA “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Radzhapov Begjan S. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan Zufarov Mars A. starshiy nauchnyy sotrudnik
Physical-technical Institute, SPA «Physics-Sun», Academy of Sciences of the Republic of Uzbekistan Sharifov Sherzod aspirant; mladshiy nauchnyy sotrudnik
the Navoi Department of the Academy of Sciences of the Republic of Uzbekistan. Navoi, Uzbekistan
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Abstract:
The paper presents the results of the development of manufacturing technology, as well as some data from studies of the electro physical and radiometric characteristics of semiconductor surface-barrier and hetero-transition Al-αGe-pSi-Au detectors of large sizes (10 cm in diameter). In addition, the monitoring data of the radon concentration in the subsoil and in the air are presented. The monitoring results showed that the concentration values vary depending on temperature, humidity and time of day.
How to Cite:
Rajapov S.A., Rakhimov R.K., Radzhapov B.S., Zufarov M.A., Sharifov S.., (2019), DEVELOPMENT OF RADOMETER BASED ON SILICON DETECTORS WITH A BIG SENSITIVE AREA. Computational Nanotechnology, 1: 65-68.
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