RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE
( Pp. 16-21)
More about authors
Saidov Amin Safarbaevich
doktor fiziko-matematicheskih nauk, professor; glavnyy nauchnyy sotrudnik
Physical-Technical Institute, «Physics-Sun» Uzbekistan Academy of Sciences Amonov Kobil Asharovich starshiy nauchnyy sotrudnik
Physical-Technical Institute, «Physics-Sun» Uzbekistan Academy of Sciences Leyderman Ada Yul’evna doktor fiziko-matematicheskih nauk, professor; glavnyy nauchnyy sotrudnik
Physical-Technical Institute, «Physics-Sun» Uzbekistan Academy of Sciences
Physical-Technical Institute, «Physics-Sun» Uzbekistan Academy of Sciences Amonov Kobil Asharovich starshiy nauchnyy sotrudnik
Physical-Technical Institute, «Physics-Sun» Uzbekistan Academy of Sciences Leyderman Ada Yul’evna doktor fiziko-matematicheskih nauk, professor; glavnyy nauchnyy sotrudnik
Physical-Technical Institute, «Physics-Sun» Uzbekistan Academy of Sciences
Abstract:
The possibility of growing of the solid solution (Si2)1 - x - y (Ge2)x (ZnSe)y on silicon substrates by liquid-phase epitaxy from the tin solution - melt has been shown. The current - voltage characteristics of heterostructures at room temperature has three sections: ohmic section - I ~ V , exponential one - I ~ exp ( qV / ckT ), and the third one with cubic dependence - I ~ V3 that at increasingtemperature is replaced by the weaker dependences - I ~ V2,8, I ~ V2,5 and I ~ V2,3 at temperatures of 360, 390 and 420 K, respectively. The experimental results are explained on the basis of theoretical ideas about the complex nature of the recombination processesin these materials.
How to Cite:
Saidov A.S., Amonov K.A., Leyderman A.Y., (2019), RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF P-SI-N-(SI2)1 - X - Y(GE2)X(ZNSE)Y-STRUCTURES ON TEMPERATURE. Computational Nanotechnology, 3 => 16-21.
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Saidov A.S., Saidov M.S., Usmonov Sh.N., Asatova U.P. // Semiconductors. 2010. Vol. 44. № 7. R. 938-945.
Saidov A.S., Saidov M.S., Usmonov Sh.N., Leiderman A.Yu., Kalanov M.U., Gaimnazarov K.G., Kurmantaev A.N. // Physics of the Solid State. 2011. Vol. 53. № 10. R. 2012-2021.
Saidov A.S., Usmonov Sh.N., Saidov M.S. // Semiconductors. 2015. Vol. 49. № 4, R. 547-550.
Saidov A.S., Saidov M.S., Usmonov Sh.N., Kholikov K.T., Saparov D.V. // Applied Solar Energy. 2008. Vol. 44. № 3b. R. 188-189.
Andreev V.M., Dolginov L.M., Tret yakov D.N. ZHidkostnaya epitaksiya v tekhnologii poluprovodnikovykh priborov // Sov. Radio. M., 1975.
KHansen M., Anderko K. Struktury dvoynykh splavov. T. II. M.: Metallurgizdat, 1962.
Saidov A.S., Saidov M.S., Koshchanov E.A. ZHidkostnaya epitaksiya kompensirovannykh sloev Arsenida Galliya i tverdykh rastvorov na ego osnove. Tashkent: Fan, 1986.
Adirovich E.I., Karageorgiy-Alkalaev P.M., Leyderman A.YU. Toki dvoynoy inzhektsii v poluprovodnikakh. M., Sov. Radio, 1978. 320 s.
Leiderman A.Yu., Minbaeva M.K. Mechanism of rapid growth of the direct current in semiconductor diode structures // Semiconductors. 1996. № 30 (10). R. 905-909.
Stafeev V.I. // ZHTF. 1958. T. 28. № 8. S. 1631-1641.
Sapaev B., Saidov A.S., Zaveryukhin B.N. // Pis ma v ZHTF. 2004. T. 30. Vyp. 2. S. 25-32.
Meylikhov E.Z., Lazarev S.D. Elektrofizicheskie svoystva poluprovodnikov: spravochnik fizicheskikh velichin. M.: TSNII Atominform, 1987. 87 s.
Lampert M.A., Mark P. Current injection in solids. Academic press, New York and London. 1970. R. 222.
SHeykman M.K., Korsunskaya N.E. Fotokhimicheskie reaktsii v poluprovodnikakh tipa AIIBIV. V kn: Fizika soedineniy AIIBIV. M.: Nauka, 1986. S. 109-145.
Leyderman A.YU., Saidov A.S., KHashaev M.M., Rakhmonov U.KH. // Al ternativnaya energetika i ekologiya. 2015. № 7 (171). S. 55-69.
Leyderman A.Yu., Saidov A.S., Khashaev M.M., Rakhmonov U.Kh. // Journal of Material Science Research. 2013. Vol. 2. № 2. R. 14-21.
