The teoretical model of new contact structure «nanoobject-semiconductor»
( Pp. 51-63)

More about authors
Imamov Erkin Z. Dr. Sci. (Phys.-Math.), Professor
Tashkent University of Information Technologies named after Muhammad al-Khorazmiy
Tashkent, Republic of Uzbekistan Jalalov Temur Asfandiyarovich d-r fiz.-mat. nauk, starshiy prepodavatel
Tashkent Institute of Information Technologies. Tashkent, Uzbekistan Muminov Ramizulla A. Dr. Sci. (Phys.-Math.), Academician of the Academy Sciences of the Republic Uzbekistan
Institute of Physics and Technology of the Scientific and Production Association “Physics-Sun” of the Academy of Sciences of the Republic of Uzbekistan
Tashkent, Republic of Uzbekistan Rakhimov Rustam Kh. Dr. Sci. (Eng.), Professor; Head at the Laboratory No. 1
Institute of Materials Science of the SPA “Physics-Sun” of the Academy of Science of Uzbekistan
Tashkent, Republic of Uzbekistan
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Abstract:
In the paper presents a theoretical model of the fundamentally new contact structures, consisting of a semiconductor base with applied on it surface a lot of nanoinclusions. Properties of a new type of contact (structure and length) are fundamentally different from the Schottky barriers, solid pn-junctions and heterojunctions. This theoretical model of the new contact structure explains the photoconversion efficiency in a wide range of infrared solar radiation, that observed in the experiment. It is shown that the effective absorption of infrared radiation is possible by lengthening the space charge region. This effect is achieved by application many nanoscale pn junctions on the semiconductor substrate base. The new contact structure can be made of cheap materials such as industrial silicon.
How to Cite:
Imamov E.Z., Jalalov T.A., Muminov R.A., Rakhimov R.K., (2015), THE TEORETICAL MODEL OF NEW CONTACT STRUCTURE «NANOOBJECT-SEMICONDUCTOR». Computational Nanotechnology, 4 => 51-63.
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