PHOTOLUMINESCENCE OF POROUS INDIUM PHOSPHIDE DUE TO QUANTUM TRANSITIONS IN SPACE-LIMITED LAYERS
( Pp. 25-31)

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Suchikova Yana Alexandrovna kandidat fiziko-matematicheskih nauk, docent
Berdyansk State Pedagogical University
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Abstract:
Tasks. Currently, special attention is paid to the study of the properties of porous InP, thanks to the prospects of using it as a material for light-emitting diodes and solar cells. In this paper we discuss the nature of the PL spectra in porous indium phosphide and its dependence on the degree of porosity of the samples. Methods. The photoluminescence spectra were recorded using a spectral installation KSVU-23 at room temperature. As excitation source a semiconductor laser with a wavelength of 375 nm. The chemical composition was studied by the method of EDAX, diffractometry studies were carried out using a DRON-3M. Conclusions. The photoluminescence spectra of porous layers of InP n-type is characterized by the PL bands in the visible spectrum with a maximum in the region (535 - 560) nm, which is related to quantum size effects in nanocrystalline porous InP and band in the region (410 - 460) nm, which is associated with the presence of oxides on the surface of the porous layer. Practical significance. These studies will come closer to understanding the nature of the photoluminescence of porous materials. This is a prerequisite for the creation of light-emitting devices based on por-InP.
How to Cite:
Suchikova Y.A., (2015), PHOTOLUMINESCENCE OF POROUS INDIUM PHOSPHIDE DUE TO QUANTUM TRANSITIONS IN SPACE-LIMITED LAYERS. Computational Nanotechnology, 1 => 25-31.
Reference list:
Sychikova YA.A., Kidalov V.V., Sukach G.A. Vliyanie tipa aniona elektrolita na morfologiyu poristogo InP, poluchennogo metodom elektroliticheskogo travleniya / ZHurnal nano- i elektronnoy fiziki. 2009. T. 1, № 4. S. 69-77.
Christophersen M., Langa S., Carstensen J., Tiginyanu I. Foll H.A comparison of pores in silicon and pores in III-V compound materials / M. Christophersen, Phys. Stat. Sol. (a). 2003. V.197, №1. P.197-203.
Domashevskaya E.P., Kashkarov V.M., Seredin P.V., Terekhov V.A., Turishchev S.Yu., Arsentyev I.N., Ulin V.P. Investigations of porous InP properties by XRD, IR, USXES, XANES and PL techniques / Materials Science and Engineering B. 2008. V.147. R. 144-147.
Langa S. Self-Induced Voltage Oscillations during Anodic Etching of n-InP and Possible Applications for Three-Dimensional Microstructures / Electrochemical and Solid-State Letters.2001.V. 4, №6. P. G50-G52.
Langa S., Carstensen J., Christophersen M., Steen K., Frey S., Tiginyanu I., Foll H. Uniform and Nonuniform Nucleation of Pores during the Anodization of Si, Ge, and III-V Semiconductors / Journal of The Electrochemical Society. 2005. V.152, №8. P.525-531.
Schlierf U., Lockwood D., Grahamb M., Schmuki P. Structural and optical properties of p-InP (100) anodized in halogenic acids /Electrochimica Acta. 2004.№49. R 1743-1749.
Schmuki P., Schlierf U., Herrmann T., Champion G. Pore initiation and growth on n-InP (100) Electrochimica Acta. 2003. № 48. R. 1301-1308.
Keywords:
porous indium phosphide, electrochemical etching, photoluminescence, nanostructures, oxides.


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