The teoretical model of new contact structure «nanoobject-semiconductor»
( Pp. 51-63)
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Imamov Erkin Z.
Ташкентский университет информационных технологий имени Мухаммеда аль-Хорезмий (ТУИТ) Министерства по развитию информационных технологий и коммуникаций Республики Узбекистан
г. Ташкент, Республика Узбекистан Jalalov Temur Asfandiyarovich d-r fiz.-mat. nauk, starshiy prepodavatel
Tashkent Institute of Information Technologies. Tashkent, Uzbekistan Muminov Ramizulla A.
Физико-технический институт Научно-производственного объединения «Физика-Солнце» Академии наук Республики Узбекистан
г. Ташкент, Республика Узбекистан Rakhimov Rustam Kh.
Institute of Materials Science of the SPA “Physics-Sun” of the Academy of Science of Uzbekistan
Tashkent, Republic of Uzbekistan
Ташкентский университет информационных технологий имени Мухаммеда аль-Хорезмий (ТУИТ) Министерства по развитию информационных технологий и коммуникаций Республики Узбекистан
г. Ташкент, Республика Узбекистан Jalalov Temur Asfandiyarovich d-r fiz.-mat. nauk, starshiy prepodavatel
Tashkent Institute of Information Technologies. Tashkent, Uzbekistan Muminov Ramizulla A.
Физико-технический институт Научно-производственного объединения «Физика-Солнце» Академии наук Республики Узбекистан
г. Ташкент, Республика Узбекистан Rakhimov Rustam Kh.
Institute of Materials Science of the SPA “Physics-Sun” of the Academy of Science of Uzbekistan
Tashkent, Republic of Uzbekistan
Abstract:
In the paper presents a theoretical model of the fundamentally new contact structures, consisting of a semiconductor base with applied on it surface a lot of nanoinclusions. Properties of a new type of contact (structure and length) are fundamentally different from the Schottky barriers, solid pn-junctions and heterojunctions. This theoretical model of the new contact structure explains the photoconversion efficiency in a wide range of infrared solar radiation, that observed in the experiment. It is shown that the effective absorption of infrared radiation is possible by lengthening the space charge region. This effect is achieved by application many nanoscale pn junctions on the semiconductor substrate base. The new contact structure can be made of cheap materials such as industrial silicon.
How to Cite:
Imamov E.Z., Jalalov T.A., Muminov R.A., Rakhimov R.K., (2015), THE TEORETICAL MODEL OF NEW CONTACT STRUCTURE «NANOOBJECT-SEMICONDUCTOR». Computational Nanotechnology, 4 => 51-63.
Reference list:
Andreev V.M. Nanotekhnologii dlya solnechnoy fotoenergetiki, Int.Scien.Jornal for Alternative Energy and Ecology. ISJAEE, №2 (46), 2007.r.93-98.
Dzhalalov T.A., Imamov E.Z., Muminov R.A.
Dzhalalov T.A., Imamov E.Z., Muminov R.A. Mekhanizm povysheniya effektivnosti solnechnykh elementov, zhurnal Geliotekhnika , №4.2010, AN RUz.S.3-8;
Dzhalalov T.A., Imamov E.Z., Muminov R.A. Osobennosti energeticheskogo spektra i mul tieksitonnoy generatsii v nanochastitsakh PbSe i PbS. zhurnal Geliotekhnika , №2.2011, AN RUz.S.18-21;
Dzhalalov T.A., Imamov E.Z., Muminov R.A. Novye mekhanizmy povysheniya effektivnosti fotopreobrazovateley v usloviyakh nalichiya nanovklyucheniy v kristalle, Mezhdunarodnaya konferentsiya Sovremennye nauchno-tekhnicheskie resheniya effektivnogo ispol zovaniya vozobnovlyaemykh istochnikov energii . Tashkent - 2011 g. (s. 37-47);
T.A.Djalalov. E.Z.Imamov, R.A.Muminov. Condition and prospects of the problem of the direct transformation of the solar radiation in electric energy on base silicon photo transformation , J. Problems of energy and sources saving (special issue) №3-4. Tashkent, 2013, P.50-55
TSoy Bronya. Preobrazovatel Elektromagnitnogo Izlucheniya (Varianty), Patent v Evraziyskom patentnom vedomstve.EP2405487 A1, (2012.08.30),
TSoy Bronya. Sposob izgotovleniya puchkovogo perekhoda, puchkovyy preobrazovatel elektromagnitnogo izlucheniya , Patent vo vsemirnoy organizatsii intellektual noy sobstvennosti, № WO 2011/040838 A2 (07.04.2011).
Bronya Tsoy, V. V. Shevelev, Method for making a beam junction, and electromagnetic-radiation beam converter, WIPO Patent Application WO/2011/040838
Dzhalalov T.A., Imamov E.Z., Muminov R.A.
Dzhalalov T.A., Imamov E.Z., Muminov R.A. Mekhanizm povysheniya effektivnosti solnechnykh elementov, zhurnal Geliotekhnika , №4.2010, AN RUz.S.3-8;
Dzhalalov T.A., Imamov E.Z., Muminov R.A. Osobennosti energeticheskogo spektra i mul tieksitonnoy generatsii v nanochastitsakh PbSe i PbS. zhurnal Geliotekhnika , №2.2011, AN RUz.S.18-21;
Dzhalalov T.A., Imamov E.Z., Muminov R.A. Novye mekhanizmy povysheniya effektivnosti fotopreobrazovateley v usloviyakh nalichiya nanovklyucheniy v kristalle, Mezhdunarodnaya konferentsiya Sovremennye nauchno-tekhnicheskie resheniya effektivnogo ispol zovaniya vozobnovlyaemykh istochnikov energii . Tashkent - 2011 g. (s. 37-47);
T.A.Djalalov. E.Z.Imamov, R.A.Muminov. Condition and prospects of the problem of the direct transformation of the solar radiation in electric energy on base silicon photo transformation , J. Problems of energy and sources saving (special issue) №3-4. Tashkent, 2013, P.50-55
TSoy Bronya. Preobrazovatel Elektromagnitnogo Izlucheniya (Varianty), Patent v Evraziyskom patentnom vedomstve.EP2405487 A1, (2012.08.30),
TSoy Bronya. Sposob izgotovleniya puchkovogo perekhoda, puchkovyy preobrazovatel elektromagnitnogo izlucheniya , Patent vo vsemirnoy organizatsii intellektual noy sobstvennosti, № WO 2011/040838 A2 (07.04.2011).
Bronya Tsoy, V. V. Shevelev, Method for making a beam junction, and electromagnetic-radiation beam converter, WIPO Patent Application WO/2011/040838
