MULTILAYER DIELECTRIC MIRRORS FOR HIGH-POWER SEMICONDUCTOR LASERS
( Pp. 94-96)
More about authors
Pritotskiy Egor Michailovich
aspirant; inzhener
Vladimir State University, Vladimir, Russia; State Laser Proving Groung «Raduga», Raduzhniy, Russia Pritotskaya Anastasia Pavlovna aspirant; inzhener
Vladimir State University, Vladimir, Russia; State Laser Proving Groung «Raduga», Raduzhniy, Russia Pankov Michail Aleksandrovich kandidat fiziko-matematicheskih nauk, docent; zamestitel nachalnika otdela
Vladimir State University, Vladimir, Russia; State Laser Proving Groung «Raduga», Raduzhniy, Russia
Vladimir State University, Vladimir, Russia; State Laser Proving Groung «Raduga», Raduzhniy, Russia Pritotskaya Anastasia Pavlovna aspirant; inzhener
Vladimir State University, Vladimir, Russia; State Laser Proving Groung «Raduga», Raduzhniy, Russia Pankov Michail Aleksandrovich kandidat fiziko-matematicheskih nauk, docent; zamestitel nachalnika otdela
Vladimir State University, Vladimir, Russia; State Laser Proving Groung «Raduga», Raduzhniy, Russia
Abstract:
Presented researches of the spectral characteristics of multilayer interference coatings on a quartz glass substrate are performed using computer simulation methods for the interaction of light with nanoscale structures. Used multilayer dielectric coatings have great optical stability and are used to form resonator mirrors of high-power semiconductor lasers.
How to Cite:
Pritotskiy E.M., Pritotskaya A.P., Pankov M.A., (2017), MULTILAYER DIELECTRIC MIRRORS FOR HIGH-POWER SEMICONDUCTOR LASERS. Computational Nanotechnology, 2 => 94-96.
Reference list:
Tarasov I. S. Moshchnye poluprovodnikovye lazery na osnove geterostruktur razdel nogo ogranicheniya // Kvantovaya elektronika, 2010, tom 40, № 8, s. 661-681.
Alferov ZH.I., Ivanov M.A., Il in YU.V., Lyutetskiy A.V., Pikhtin N.A., Tarasov I.S. O selektsii poperechnykh mod v InGaAsP lazerakh s dielektricheskimi pokrytiyami zerkal // Pis ma v ZHTF, 1995, tom 21, vyp. 5, s. 64 - 69.
Petrunov A.N., Podoskin A.A., SHashkin I.S., Slipchenko S.O., Pikhtin N.A., Nalet T.A., Fetisova N.V., Vavilova L.S., Lyutetskiy A.V., Alekseev P.A., Titkov A.N., Tarasov I.S. Impul snye poluprovodnikovye lazery s povyshennoy opticheskoy prochnost yu vykhodnykh zerkal rezonatora // Fizika i tekhnika poluprovodnikov, 2010, tom 44, vyp. 6, s. 817-821.
Logushkova YU.S., Malysheva E.I., Nekorkin S.M i dr. ASM-issledovaniya i opticheskie svoystva oksidnykh plenok dlya mnogosloynykh prosvetlyayushchikh pokrytiy // Struktura i svoystva tverdykh tel. Sbornik nauchnykh trudov. - N. Novgorod: NNGU, 2003, s. 128-133.
Zvonkov N.B., Akhlestina S.A., Ershov A.V., Zvonkov B.N., Maksimov G.A., Uskova E.A. Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm // Quantum Electronics, 1999, V. 29, N 3, p. 217-218.
Ershov A.V., Mashin A.I. Mnogosloynye opticheskie pokrytiya. Proektirovanie, materialy, osobennosti tekhnologii polucheniya metodom elektronnoluchevogo ispareniya. Uchebno-metodicheskiy material po programme povysheniya kvalifikatsii Novye materialy elektroniki i optoelektroniki dlya informatsionno-telekomunikatsionnykh sistem , Nizhniy Novgorod, 2006, c. 87-90.
Kolodnyy G.YA., Levchuk E.A., Poryadin YU.D., YAkovlev P.P. Mnogosloynye interferentsionnye pokrytiya v kvantovoy elektronike // Elektronnaya promyshlennost , 1981, № 5, 6, c. 93-101.
Alferov ZH.I., Ivanov M.A., Il in YU.V., Lyutetskiy A.V., Pikhtin N.A., Tarasov I.S. O selektsii poperechnykh mod v InGaAsP lazerakh s dielektricheskimi pokrytiyami zerkal // Pis ma v ZHTF, 1995, tom 21, vyp. 5, s. 64 - 69.
Petrunov A.N., Podoskin A.A., SHashkin I.S., Slipchenko S.O., Pikhtin N.A., Nalet T.A., Fetisova N.V., Vavilova L.S., Lyutetskiy A.V., Alekseev P.A., Titkov A.N., Tarasov I.S. Impul snye poluprovodnikovye lazery s povyshennoy opticheskoy prochnost yu vykhodnykh zerkal rezonatora // Fizika i tekhnika poluprovodnikov, 2010, tom 44, vyp. 6, s. 817-821.
Logushkova YU.S., Malysheva E.I., Nekorkin S.M i dr. ASM-issledovaniya i opticheskie svoystva oksidnykh plenok dlya mnogosloynykh prosvetlyayushchikh pokrytiy // Struktura i svoystva tverdykh tel. Sbornik nauchnykh trudov. - N. Novgorod: NNGU, 2003, s. 128-133.
Zvonkov N.B., Akhlestina S.A., Ershov A.V., Zvonkov B.N., Maksimov G.A., Uskova E.A. Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm // Quantum Electronics, 1999, V. 29, N 3, p. 217-218.
Ershov A.V., Mashin A.I. Mnogosloynye opticheskie pokrytiya. Proektirovanie, materialy, osobennosti tekhnologii polucheniya metodom elektronnoluchevogo ispareniya. Uchebno-metodicheskiy material po programme povysheniya kvalifikatsii Novye materialy elektroniki i optoelektroniki dlya informatsionno-telekomunikatsionnykh sistem , Nizhniy Novgorod, 2006, c. 87-90.
Kolodnyy G.YA., Levchuk E.A., Poryadin YU.D., YAkovlev P.P. Mnogosloynye interferentsionnye pokrytiya v kvantovoy elektronike // Elektronnaya promyshlennost , 1981, № 5, 6, c. 93-101.
Keywords:
powerful semiconductor lasers, multilayer interference coating.
Related Articles
